馮文然
馮文然，男，1978年3月出生，河北欒城人，理學(xué)博士，教授，碩士生導(dǎo)師。畢業(yè)于中國科學(xué)院物理研究所等離子體物理專業(yè)。現(xiàn)在新材料與化工學(xué)院材料工程系工作，任材料工程系副主任，材料科學(xué)與工程專業(yè)責(zé)任教授。
從事相變儲能材料開發(fā)、光電薄膜材料及半導(dǎo)體量子點的高性能化、器件化的應(yīng)用基礎(chǔ)研究，關(guān)注這類材料在制備和后處理過程中的結(jié)構(gòu)演變、結(jié)構(gòu)與光電性能關(guān)系、以及器件優(yōu)化等，在新材料制備及多層次表征方面具有豐富的經(jīng)驗。主持完成北京市自然科學(xué)基金面上項目、北京市組織部優(yōu)秀人才項目、北京市教委科技計劃項目等，在研企業(yè)橫向科研項目2項。發(fā)表SCI收錄的學(xué)術(shù)論文50余篇，其中第一作者/通訊作者30余篇，被引用1400余次（Google Scholar），H–因子20。申請發(fā)明專利5件，已授權(quán)3件。發(fā)表國際會議論文5篇，在第四屆中日等離子體論壇上做邀請報告1次。作為主要完成人獲行業(yè)協(xié)會科研三等獎1項。參編專著1部、教材1部。目前擔(dān)任ACS: Applied Materials & Interface、ACS Applied Nano Materials、Surface and Coatings Technology、Applied Surface Science、Thin Solid Films、Ceramics International、Vacuum等期刊的論文審稿人。
I. 主要研究工作
1.光電薄膜材料與探測器件開發(fā)；
2.半導(dǎo)體量子點材料合成與器件優(yōu)化；
3.相變儲能材料及設(shè)備開發(fā)。
II. 承擔(dān)科研項目
1. 企業(yè)橫向項目：相變材料及相變儲能組件及設(shè)備開發(fā)，項目負(fù)責(zé)人，2022.12–2024.12。
2. 企業(yè)橫向項目：高性能相變材料開發(fā)，項目負(fù)責(zé)人，2023.8–2026.8。
3. 企業(yè)橫向項目：紅外探測器薄膜制備技術(shù)開發(fā)，項目負(fù)責(zé)人，2015.11–2018.11。
4. 北京市自然科學(xué)基金面上項目：脈沖高能量密度等離子體技術(shù)合成納米晶PbSe薄膜（項目號：1112011），項目負(fù)責(zé)人，2011.1-2013.6。
5. 北京市委組織部優(yōu)秀人才項目：脈沖高能量密度等離子體合成納米晶PbSe薄膜研究（項目號：2009D005005000002），項目負(fù)責(zé)人，2009.1–2010.12。
III. 代表性學(xué)術(shù)論文
1. Feng Wenran*, Zhang Xiaoke, Hong Anni, Lang Haoze, Li Yongqi, Yuan Shiwei, Jiang Lai. One-pot synthesis, sensitization and photoelectric performance of calcium doped PbSe thin films. J. Mater. Sci.: Mater. Electron., 2024, 35: 736.
2. Gao Yan, Dong Haitao, Zhang Xiaoke, Feng Wenran*. Effects of substrate bias voltage on structural and optical properties of co-sputtered (AlxGa1–x)2O3 films. J. Electron. Mater., 2023, 52: 7429–7437.
3. 高妍，董海濤，張小可，馮文然. (AlxGa1–x)2O3結(jié)構(gòu)、電子和光學(xué)性質(zhì)的第一性原理研究. 人工晶體學(xué)報，2023，52 (9): 1674–1719.
4. Dong Haitao, Gao Yan, Zhang Xiaoke, Li Zhen, Feng Wenran*. In-situ oxygen sensitizing PbSnSe films for high-performance photoelectronic detection. Vacuum, 2023, 207: 111538.
5. Li Zhen, Chen Yingying, Lang Haoze, Wan Jianghong, Gao Yan, Dong Haitao, Zhang Xiaoke, Feng Wenran*. Pb0.8Sn0.2Se thin films: synthesis, sensitization and properties evolution. c
6. Feng Wenran*, Li Zhen, Chen Yingying, Chen Jinyang, Lang Haoze, Wan Jianghong, Gao Yan, Dong Haitao. Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization. J. Mater. Sci., 2022, 57 (3): 1881–1889.
7. Feng Wenran*, Song Jiali, Ren Yashuang, Chen Fei, Hu Jifei, Yu Sensen, Zhao Hongchun, Tang Yiyun, Huang Song. Structural and optical evolution in Pb100–xAgxSe (x= 3, 6, 9 and 12) thin films by chemical bath deposition. J. Alloy. Compd., 2019, 770 (5): 649–654.
8. Song Jiali, Feng Wenran*, Ren Yashuang, Zheng Danning, Dong Haitao, Zhu Ran, Yi Liya, Hu Jifei. Columnar Te-doped-PbSe thin films on glass for infrared photoelectric detection. Vacuum, 2018, 155 (9): 1–6.
9. Feng Wenran*, Song Jiali, Ren Yashuang, Yi Liya, Hu Jifei, Zhu Ran, Dong Haitao. Structural, morphological, electrical and optical properties of PbSe thin films sputtered at various pressures. Physica E, 2018, 102 (8): 153–159.
10. Feng Wenran*, Zhou Hai, Chen Fei. Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films. Vacuum, 2015, 114 (4): 82–85.
11. Feng Wenran*, Wang Xiaoyang, Chen Fei, Liu Wan, Zhou Hai, Wang Shuo, Li Haoran. Influence of substrate temperature on structural, morphological and electrical properties of PbSe film deposited by radio frequency sputtering. Thin Solid Films, 2015, 578 (3): 25–30.
12. Feng Wenran*, Wang Xiao yang, Zhou Hai, Chen Fei. Effects of sputtering power on properties of PbSe nanocrystalline thin films deposited by RF magnetron sputtering. Vacuum, 2014, 109 (11): 108–111.
13. Feng Wenran*, Zhou Hai, Yang Si-ze. Nano-indentation and wear-resistance behaviors of TiCN films by pulsed plasma, Mater. Sci. Eng., A, 2010, 527 (18–19): 4767–4770.
14. Feng Wenran*, Zhou Hai, Yang Si-ze. Gas pressure dependence of composition in Ta–Ti–N films prepared by pulsed high energy density plasma. Mater. Chem. Phys., 2010, 124 (11): 287–290.
15. Feng Wenran*, Chen Guangliang, Li Li, LvGuohua, Zhang Xianhui, NiuErwu, Liu Chizi, Yang Si-ze. Characteristics of (Ti,Ta)N thin films prepared by using pulsed high energy density plasma. J. Phys. D: Appl. Phys., 2007, 40 (6): 4228–4233.
16. Feng Wenran*, Chen Guangliang, Zhang Yan, Gu Weichao, Zhang Guling, Niu Erwu, Liu Chizi, Yang Si-ze. Preparation of Ta(C)N films by pulsed high energy density plasma. J. Phys. D: Appl. Phys., 2007, 40 (3): 2132–2137.
17. Feng Wenran*, Liu Chizi, Chen Guangliang, Zhang Guling, Gu Weichao, Niu Erwu, Yang Si-Ze. Titanium carbonitride films on cemented carbide cutting tool prepared by pulsed high energy density plasma. Appl. Surf. Sci., 2007, 253 (11): 4923-4927.
18. Feng Wenran*, Yan Dianran, He Jining, Zhang Guling, Chen Guangliang, Gu Weichao, Yang Size. Microhardness and toughness of the reactive plasma sprayed TiN coating. Appl. Surf. Sci., 2005, 243 (1–4): 204–213.
19. Feng Wenran*, Yan Dianran, He Jining, Li Xiangzhi, Dong Yanchun. Reactive plasma sprayed TiN coating and its tribological properties. Wear, 2005, 258 (2): 806–811.
IV. 招生信息
本人主要招收材料科學(xué)與工程（0805）學(xué)術(shù)學(xué)位碩士、材料與化工（0856）專業(yè)學(xué)位碩士（材料工程領(lǐng)域085601）。誠摯歡迎材料、物理、化學(xué)等專業(yè)踏實認(rèn)真、敢于創(chuàng)新、具備較強(qiáng)的動手能力的同學(xué)加入本團(tuán)隊。
